SST94 SOT-89 3L ROHS

PRELIMINARY LS94, SST94 GENERAL PURPOSE SINGLE P-CHANNEL JFET FEATURES HIGH GAIN Gfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = 1.0nA LOW CAPACITANCE CRSS = 32pF SST94 SOT-89 TOP VIEW LS94 TO-92 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +135°C Maximum Power Dissipation Continuous Power Dissipation 400mW Maximum Currents Gate Forward Current IG(F) = -10mA Maximum Voltages Gate to Drain Voltage VGD = 25V Gate to Source Voltage VGS = 25V * For equivalent N-Channel, see LSK190 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX BVGDS Gate to Drain Breakdown Voltage 25 VGS(OFF) Gate to Source Pinch-off Voltage 0.15 2 -2.6 -30 IDSS IG Drain to Source Saturation Current2 Gate Operating Current IGSS Gate to Source Leakage Current Gfss Full Conductance Transconductance RDS(on) 50 1 8 22 Drain to Source on Resistance 75 CISS Common Source Input Capacitance 105 CRSS Common Source Reverse Transfer Cap. 32 Linear Integrated Systems 150 UNITS V CONDITIONS VDS = 0V, IG = 100µA VDS = -10V, ID = -0.1µA mA VDS = -10V, VGS = 0V pA VDG = -10V, ID = -1mA nA VGS = 25V, VDS = 0V mS VDS = -10V, VGS = 0V, f = 1kHz Ω pF VGS = 0V, ID = -1mA VDS = -10V, VGS = 0V, f = 1MHz VDS = -10V, ID = 0A, f = 1MHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201176 07/23/2019 Rev#A8 ECN# LS94 PRELIMINARY TO-92 SOT-89 Dimensions in millimeters Dimensions in inches NOTES: 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse test: PW ≤ 300 µS, Duty Cycle ≤ 3% 3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate negative electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201176 07/23/2019 Rev#A8 ECN# LS94